A model for changing the technological process for the growth of epitaxial layers by means of the heating of the growth zone
Evgeny L. Pankratov1, 2
1Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia.
2Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia.
DOI:
https://doi.org/10.7494/cmms.2021.1.0741
Abstract:
The nonstationary transfer of heat during epitaxial layer growth in gas phase epitaxy reactors is analyzed within the work. Based on this analysis, several recommendations on the organization of the heating of the growth zone to increase the homogeneity of the epitaxial layers were formulated. An approach to analyze the transfer of heat during epitaxial layer growth from the gas phase is also introduced. The approach leads to the possibility of simultaneously accounting for heat transfer nonlinearity and changes of parameters of heat transfer in both space and time.
Cite as:
Pankratov, E.L. (2021). A model for changing the technological process for the growth of epitaxial layers by means of the heating of the growth zone. Computer Methods in Materials Science, 21(1), 5–12. https://doi.org/10.7494/cmms.2021.1.0741
Article (PDF):
Keywords:
Epitaxy from gas phase, Improvement of properties of films, Analytical approach for modeling
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