A model for changing the technological process for the growth of epitaxial layers by means of the heating of the growth zone
1Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia
2Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia
The nonstationary transfer of heat during epitaxial layer growth in gas phase epitaxy reactors is analyzed within the work. Based on this analysis, several recommendations on the organization of the heating of the growth zone to increase the homogeneity of the epitaxial layers were formulated. An approach to analyze the transfer of heat during epitaxial layer growth from the gas phase is also introduced. The approach leads to the possibility of simultaneously accounting for heat transfer nonlinearity and changes of parameters of heat transfer in both space and time.
Pankratov, E.L. (2021). A model for changing the technological process for the growth of epitaxial layers by means of the heating of the growth zone. Computer Methods in Materials Science, 21(1), 5–12. https://doi.org/10.7494/cmms.2021.1.0741
Bravo-García, Y.E., Rodríguez-Fragoso, P., Mendoza-Alvarez, J.G., & Gonzalez de la Cruz, G. (2015). Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy. Materials Science in Semiconductor Processing, 40, 253–256.
Carslaw, H.S., & Jaeger, J.C. (1964). Conduction of heat in solids. Clarendon Press.
Chakraborty, A., Xing, H., Craven, M.D., Keller, S., Mates, T., Speck, J.S., Den Baars, S.P., & Mishra, U.K. (2004). Nonpolar a-plane p-type GaN and p-n-Junction Diodes. Journal of Applied Physics, 96(8), 4494–4499.
Гусев, В.Г., Гусев, Ю.М. (1991). Электроника. Высшая школа.
Korn, G.A., & Korn, T.M. (1968). Mathematical Handbook for scientists and engineers. Definitions, theorems and formulas for reference and review (2nd ed.). McGraw-Hill Book Company.
Лачин, В.И., Савелов, Н.С. (2001). Электроника. Феникс.
Li, Y., Antonuk, L.E., El-Mohri, Y., Zhao, Q., Du, H., Sawant, A., & Wang, Y. (2006). Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors. Journal of Applied Physics, 99(6), 1–7.
Lundin, V.V., Sakharov, A.V., Zavarin, E.E., Sinitsyn, M.A., Nikolaev, A.E., Mikhailovsky, G.A., Brunkov, P.N., Goncharov, V.V., Ber, B.Y., Kazantsev, D.Y., & Tsatsulnikov, A.F. (2009). Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers. Semiconductors, 43(7), 963–967.
Mitsuhara, M., Ogasawara, M., & Sugiura, H. (1998). Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium. Journal of Crystal Growth, 183(1), 38–42.
Pankratov, E.L. (2012). Decreasing of depth of p-n-junction in a semiconductor heterostructure by serial radiation processing and microwave annealing. Journal of Computational and Theoretical Nanoscience, 9(1), 41–49.
Pankratov, E.L., & Bulaeva, E.A. (2012). Decreasing of quantity of radiation defects in an implanted-junction rectifiers by using overlayers. International Journal of Micro-Nano Scale Transport, 3(3–4), 119–130.
Pankratov, E.L., & Bulaeva, E.A. (2013a). About controlling of regimes of heating during growth a heterostructures from gas phase. Universal Journal of Materials Science, 1(4), 180–200.
Pankratov, E.L., & Bulaeva, E.A. (2013b). Application of native inhomogeneities to increase compactness of vertical field-effect transistors. Journal of Computational and Theoretical Nanoscience, 10(4), 888–893.
Pankratov, E.L., & Bulaeva, E.A. (2013c). Doping of materials during manufacture p-n-junctions and bipolar transistors. Analytical approaches to model technological approaches and ways of optimization of distributions of dopants. Reviews in Theoretical Science, 1(1), 58–82.
Pankratov, E.L., & Bulaeva, E.A. (2013d). Optimal criteria to estimate temporal characteristics of diffusion process in a media with inhomogenous and nonstationary parameters. Analysis of influence of variation of diffusion coefficient on values of time characteristics. Reviews in Theoretical Science, 1(3), 305–316.
Pankratov, E.L., & Bulaeva, E.A. (2015). On prognosis of epitaxy from gas phase process to improve properties of epitaxial layers. 3D Research, 6(4), 46–56.
Sokolov, Y.D. (1955). About the definition of dynamic forces in the mine lifting. Applied Mechanics, 1(1), 23–35.
Sorokin, L.M., Veselov, N.V., Shcheglov, M.P., Kalmykov, A.E., Sitnikova, A.A., Feoktistov, N.A., Osipov, A.V., & Kukushkin, S.A. (2008). Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Technical Physics Letters, 34(11), 992–994. https://doi.org/10.1134/S1063785008110278.
Степаненко, И.П. (1980). Основы микроэлектроники. Советское радио.
Taguchi, H., Miyake, S., Suzuki, A., Kamiyama, S., & Fujiwara, Y. (2016). Evaluation of crystallinity of GaN epitaxial layer after wafer dicing. Materials Science in Semiconductor Processing, 41, 89–91.
Talalaev, R.A., Yakovlev, E.V., Karpov, S.Y., & Makarov, Y.N. (2001). On low temperature kinetic effects in metal-organic vapor phase epitaxy of III–V compounds. Journal of Crystal Growth, 230(1–2), 232–238.
Vorob’ev, A.A., Korablev, V.V., & Karpov, S.Y. (2003). The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen. Semiconductors, 37(7), 838–842. https://doi.org/10.1134/1.1592861.