On prognosis of variation of properties of epitaxial layers by choosing of temperature field during growth

Evgeny L. Pankratov1, 2

1Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia

2Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia


In this paper, we analyze the influence of the temperature of growth of epitaxial layers during their growth. Conditions are formulated under which the homogeneity of the properties of the epitaxial layers increases. An analytical approach for the analysis of mass and heat transfer is proposed, allowing at the same time to take into account changes in the parameters of processes both in space and in time, as well as nonlinearity of these processes.

Cite as:

Pankratov, E.L. (2020). On prognosis of variation of properties of epitaxial layers by choosing of temperature field during growth. Computer Methods in Materials Science,20, 1-6.

Article (PDF):

Key words:

Epitaxial growth, Properties of epitaxial layers, Homogeneity of properties


Carslaw, H.S., Jaeger, J.C., 1964, Conduction of heat in solids, Oxford University Press, London.

Chakraborty, A., Xing, H., Craven, M.D., Keller, S., Mates, T., Speck, J.S., DenBaars, S.P., Mishrab, U.K., 2004, Nonpolar α-plane p-type GaN and p-n-Junction diodes, Journal of Applied Physics, 96, 4494-4499.

Gotra, Z.Yu., 1991, Technology of microelectronic devices: a Handbook, Radio and communication, Moscow.

Gusev, V.G., Gusev, Yu.M., 1991, Electronics. Higher School, Moscow.

Lachin, V.I., Savelov, N.S., 2001, Electronics. Phenics, Rostovon- Don.

Li, Y., Antonuk, L.E., El-Mohri, Y., Zhao, Q., Du, H., Sawant, A., Wang, Y., 2006, Effects of X-ray irradiation on polycrystalline silicon, thin-film transistors, Journal of Applied Physics, 99, 064501-1-064501-7.

Lundin, V.V., Sakharov, A.V., Zavarin, E.E., Sinitsin, M.A., Nikolaev, A.E., Mikhailovsky, G.A., Brunkov, P.N., Goncharov,
V.V., Ber, B.Ya., Kazantsev, D.Yu., Tsatsul’nikov, A.F., 2009, Effect of carrier gas and doping profile on the surface morphology of movpe grown heavily doped GaN:Mg layers, Semiconductors, 43, 963-967.

Mitsuhara, M., Ogasawara, M., Sugiura, H., 1998, Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl- beryllium, Journal of Crystal Growth, 183, 38-42.

Nazmul, A.M., Sugahara, S., Tanaka, M., 2003, MBE growth, structural, and transport properties of Mn δ-doped GaAs layers, Journal of Crystal Growth, 251, 303-310.

Pankratov, E.L., 2004, Relaxation time of dopant concentration in inhomogenous medium with time varying diffusion coefficient, Applied Nonlinear Dynamics, 12, 35-44.

Pankratov, E.L. Bulaeva, E.A., 2015, Variation of mismatchinduced stress on a heterostructure with changing temperature of growth, Advances in Materials Science and Engineering: An International Journal, 2, 1-10.

Sokolov, Yu D., 1955, About the definition of dynamic forces in the mine lifting, Applied Mechanics, 1, 23-35.

Sorokin, L.M., Veselov, N.V., Shcheglov, M.P., Kalmykov, A.E., Sitnikova, A.A., Feoktistov, N.A., Osipov, A.V.,
Kukushkin, S.A., 2008, Electron microscopic study of the structure SiC/Si (111) obtained by solid-phase epitaxy, Technical Physics Letters, 34, 88-94.

Stepanenko, I.P., 1980, Basis of microelectronics, Soviet radio, Moscow. Talalaev, R.A., Yakovleva, E.V., Karpova, S.Yu., Makarov, Yu.N., 2001, On low temperature kinetic effects in metalorganic vapor phase epitaxy of III-V compounds, Journal of Crystal Growth, 230, 232-238.

Tikhonov, A.N., Samarskii, A.A., 1972, The mathematical physics equations, Science, Moscow. Vorob’ev, A.A., Korabl’ev, V.V., Karpov, S.Yu., 2003, Mgdoping GaN in molecular-beam epitaxy from activated nitride,
Semiconductors, 37, 838-842.